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发布时间:2015.03.04
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New frontiers of oxide electronics: correlation between
electrical,magnetic and optical properties of oxide
semiconductors
Dr. Antonio Ruotolo
Department
of Physics and Materials Science, City University of Hong Kong
To combine
electronics, magnetics, and photonics for next generation
multifunctional
devices, it is essential to search for magnetic semiconductor
materials with correlated
properties. Here we present examples of systems in
which one between electrical, magnetic
or optical properties can be tuned by
changing the others.
Non-volatile electrical control of magnetism was, for
instance, engineered in Mnsubstituted
ZnO [1,2] and NiO [3]. We show that the
magnetic properties of these two
simple semiconductor oxides can be altered
in a reversible and non-volatile manner by the
application of an electric
field. Bipolar resistive memory switching was induced in films
sandwiched
between two metallic electrodes. The bistable switching of the resistive
state
was accompanied by a bistable switching of the magnetic moment. The
scalability of the
system was investigated by fabricating devices with
lateral size down to 400 nm.
The optical properties of wide bang gap
semiconductors can be tuned by doping with
transition metals. Doping with
magnetic ions is expected to widen the band gap and
produce a blue-shift in
the emission peak at room temperature. A red shift can be induced
at low
temperatures due to the sp-d exchange interaction. We succeeded in doing so for
the
first time in Mn-substituted ZnO [4]. In films with low concentration of
dopant, increasing
the exchange interaction by increasing the concentration
of charge carriers results in a redshift
of the near-band-edge emission peak
at room temperature. The expected blue-shift is
recovered upon increasing the
concentration of the dopant. The same films show a
surprisingly large
negative magneto-resistance at low temperatures. By using
magnetophotoluminescence,
we demonstrated that the affect is due to
magnetically induced
transition from hopping to band-conduction where the
activation energy is caused by sp-d
exchange interaction [5].
[1] X. L.
Wang et al., J. Alloys Compd. 542, 147 (2012).
[2] X. L. Wang et al., J.
Appl. Phys. 113, 17C301 (2013).
[3] X. L. Wang et al., Appl. Phys. Lett. 103,
223508 (2013).
[4] X. L. Wang et al., Appl. Phys. Lett. 102, 102112
(2013).
[5] X. L. Wang et al., Scintific Reports, 5, 9221
(2015).
Biography
Dr. Ruotolo received his Laurea cum Laude in 2002 from
the University of Naples (IT)
“Federico II” with a thesis on
superconductivity, under the supervision of Prof. A. Barone.
In 2003 he
joined the Dept. of Materials Science of the University of Cambridge
(UK),
supported by a European exchange grant. He completed his doctorate in
2006 in Naples
with a thesis on spintronics, in collaboration with the Fiat
research center of Turin. In
2007, he became a Research Associate of the Hong
Kong Polytechnic University before
receiving a Marie Curie post-doctoral
fellowship in the group of the future Nobel Laureate
Prof. Albert Fert in the
CNRS/Thales joint laboratory in Paris (FR). He has authored more
than 50
papers in top-tier journals, including Nature Physics, Nature Nanotechnology
and
Scientific Reports. He has joined the City University of Hong Kong in
October 2009,
where he is currently an Assistant Professor.
时间:2015年3月6日(周五)下午
地点:物理馆106会议室